Multiple Phase-Formation in Ni-Ge System Monitored by SEM, AFM and PIXE Analytical Techniques
Abstract
We present evidence of multiple phase formation in the Ni-Ge system observed with the aid of the Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and Particle Induced X-ray Emission (PIXE) analytical techniques. Using a conventional optical mask, we prepare lateral diffusion couples of thick rectangular germanium islands on a nickel thin film. We observe at elevated temperatures a lateral diffusion of excess atoms from the Ge rich island to the surrounding Ni thin film; in a process which leaves a sequence of clearly discernible multiple phases whose interfaces are optically resolvable. We reveal finer detail in structure, texture and stoichiometry of the phases using AFM and SEM micrographs together with µ-RBS (Microprobe Rutherford Backscattering Spectrometry) and µ-PIXE elemental distribution maps. Our results confirm that when complemented with AFM, SEM, and micro-Rutherford backscattering spectrometry, lateral diffusion coupling technique is the most effective method to observe simultaneously multiple phases in a metallic-semiconducting binary system.References
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2. F. Nemouchi, D. Mangelinck, J.L. Lábár, M. Putero, C. Bergman, and P. Gas, Microelectron. Eng. 83, 2101 (2006).
3. A. Habanyama, C.M. Comrie, and K.J. Pondo, Afr. Rev. Phys. 6, 87 (2011).
4. C.M. Comrie, K.J. Pondo, C. van der Walt, D. Smeets, J. Demeulemeester, A. Habanyama, W. Knaepen, C. Detavernier, and A. Vantomme, Thin Solid Films 526, 261 (2012).
5. E.D. Marshall, C.S. Wu, C.S. Pai, D.M. Scott, and S.S. Lau, Mater. Res. Soc. Symp. Proc. 47, 161 (1985).
6. L.J. Jin, K.L. Pey, W.K. Choi, E.A. Fitzgerald, D.A. Antoniadis, A.J. Pitera, M.L. Lee, D.Z. Chi, and C.H. Tung, Thin Solid Films 462–463, 151 (2004).
7. Y.F. Hsieh, L.J. Chen, E.D. Marshall, S.S. Lau, and N. Kawasaki, Thin Solid Films 162, 287 (1988).
8. M. Wittmer, M.A. Nicolet, and J.W. Mayer, Thin Solid Films 42, 51 (1977).
9. S. Gaudet, U. Detavernier, C. Gent, C. Lavoie, and P. Desjardins, J. Appl. Phys. 100(3), 034306 (2006).
10. F. Nemouchi, D. Mangelinck, C. Bergman, G. Clugnet, and P. Gas, Appl. Phys. Lett. 89, 131920 (2006).
11. J. Ken Patterson, B.J. Park, K. Ritley, H.Z. Xiao, L.H. Allen, and A. Rockett, Thin Solid Films 253(1–2), 456 (1994).
12. M. Mueller, Q.T. Zhao, C. Urban, C. Sandow, D. Buca, S. Lenk, S. Estévez, and S. Mantl, Mater. Sci. Eng. B 154–155, 168 (2008).
13. S. Gaudet, C. Detavernier, A.J. Kellock, P. Desjardins, and C. Lavoie, J. Vac. Sci. Technol. A 24, 474 (2005).
14. Y.F. Hsieh, L.J. Chen, E.D. Marshall, and S.S. Lau, Appl. Phys. Lett. 51(20), 1588 (1987).
15. U. Gösele and K.N. Tu, J. Appl. Phys. 53(4), 3252 (1982); W.C. Johnson and G. Martin, J. Appl. Phys. 68 (1990); F.M. d’Heurle, J. Mater. Res. 3, 167 (1988).
16. B. Blanpain, J.W. Mayer, J.C. Liu, and K.N. Tu, J. Appl. Phys. 68, 3259 (1990); B. Blanpain, J.W. Mayer, J.C. Liu, and K.N. Tu, Phys. Rev. Lett. 64, 2671 (1990).
17. G.V. Kidson, J. Nucl. Mater. 3, 21 (1961).
Published
2020-12-18
How to Cite
[1]
D. Chilukusha, A. Habanyama, and H. Mweene, “Multiple Phase-Formation in Ni-Ge System Monitored by SEM, AFM and PIXE Analytical Techniques”, Journal of Natural and Applied Sciences, vol. 2, no. 1, pp. 65-84, Dec. 2020.
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