An in SITU Real-time RBS Study of Sequence and Temperature of Formation of Nickel Germanides
Keywords:
Nickel Germanides, in Situ Real-time RBS, Ramped Thermal Anneal, Simultaneous Growth
Abstract
The sequence of phase formation and the temperatures at which these phases form in the Ni/Ge binary system have been studied in real-time at sub-eutectic temperatures using in situ realtime Rutherford Backscattering Spectrometry (RBS). Nonconventional (i.e., with marker) thin film diffusion couples produced by depositing nanometric nickel films (47-80 nm) on Ge<100>- oriented substrates were thermally annealed in the scattering chamber by linear temperature ramping to induce solid phase reactions (SPR) between nickel and germanium. Only two phases were observed during the reaction. The first phase to nucleate was identified to be Ni5Ge3 and its growth was observed at 145 oC. The last and final phase was found to be NiGe and its growth started at 170 oC. Although the growth of phases in the thin film diffusion couple regime is known to be sequential in which one phase grows before another phase starts to grow, an unusual simultaneous growth of Ni5Ge3 and NiGe in the presence of nickel has been demonstrated in this study.References
1. Chui, C.O., Kim, H., Chi, D., Triplett, B.B., McIntyre, P.C., and Saraswat, K.C. (2002). “A sub-400 °C germanium MOSFET technology with high-k dielectric and metal gate.” IEDM Technical Digest, 437–440.
2. Ritenour, A., Yu, S., Lee, M.L., Lu, N., Bai, W., Pitera, A., Fitzgerald, E.A., Kwong, D.L., and Antoniadis, D.A. (2003). “Epitaxial strained germanium p-MOSFETs with HfO₂ gate dielectric and TaN gate electrode.” IEDM Technical Digest, 433–436.
3. Shang, H., Okorn-Schmidt, H., Chan, K.K., Copel, M., Ott, J.A., Kozlowski, P.M., Steen, S.E., Cordes, S.A., Wong, H.S.P., Jones, E.C., and Haensch, W.E. (2002). “High-mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric.” IEDM Technical Digest, 441–444.
4. Chui, C.O., Ramanathan, S., Triplett, B.B., McIntyre, P.C., and Saraswat, K.C. (2002). “Germanium MOS capacitors incorporating ultrathin high-k gate dielectrics.” IEEE Electron Device Letters, 23(8), 473–475.
5. Houssa, M., and Heyns, M. (2004). “High-k gate dielectrics: why do we need them?” In High-k Gate Dielectrics, M. Houssa (Ed.), pp. 3–14. Bristol & Philadelphia: Institute of Physics Publishing.
6. Depas, M., Vermeire, B., Mertens, P.W., Van Meirhaeghe, R.L., and Heyns, M.M. (1995). “Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO₂/Si structures.” Solid-State Electronics, 38(8), 1465–1471.
7. Lo, S.H., Buchanan, D.A., Taur, Y., and Wang, W. (1997). “Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs.” IEEE Electron Device Letters, 18, 209–211.
8. Wilk, G.D., Wallace, R.M., and Anthony, J.M. (2001). “High-k gate dielectrics: current status and materials properties considerations.” Journal of Applied Physics, 89(10), 5243–5275.
9. Shang, H., Lee, K.L., Kozlowski, P., D’Emic, C., Babich, I., Sikorshi, E., Ieong, M., Wong, H.S.P., Guarini, K., and Haensch, W. (2004). “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate.” IEEE Electron Device Letters, 25(3), 135–137.
10. Shang, H., Okorn-Schmidt, H., Chan, K.K., Copel, M., Ott, J.A., Kozlowski, P.M., Steen, S.E., Cordes, S.A., Wong, H.S.P., Jones, E.C., and Haensch, W.E. (2002). “High-mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric.” IEDM Technical Digest, 441–444.
11. Gaudet, S., Detavernier, C., Kellock, A.J., Desjardins, P., and Lavoie, C. (2006). “Thin film reaction of transition metals with germanium.” Journal of Vacuum Science & Technology A, 24(3), 474–485.
12. Marshall, E.D., Wu, C.S., Pai, C.S., Scott, D.M., and Lau, S.S. (1985). “Metal–germanium contacts and germanide formation.” Materials Research Society Symposium Proceedings, 47, 161–166.
13. Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S., and Kawasaki, N. (1988). “Partial epitaxial growth of Ni₂Ge and NiGe on Ge(111).” Thin Solid Films, 162, 287–294.
14. Wittmer, M.W., Nicolet, M.A., and Mayer, J.W. (1977). “The first phase to nucleate in planar transition metal–germanium interfaces.” Thin Solid Films, 42, 51–59.
15. Gaudet, S., Detavernier, C., Kellock, A.J., Desjardins, P., and Lavoie, C. (2006). “Thin film reaction of transition metals with germanium.” Journal of Vacuum Science & Technology A, 24(3), 474–485.
16. Nemouchi, F., Mangelinck, D., Lábár, J.L., Putero, M., Bergman, C., and Gas, P. (2006). “A comparative study of nickel silicides and nickel germanides: phase formation and kinetics.” Microelectronic Engineering, 83, 2101–2106.
17. Nemouchi, F., Mangelinck, D., Bergman, C., Clugnet, G., and Gas, P. (2006). “Simultaneous growth of Ni₅Ge₃ and NiGe by reaction of Ni films with Ge.” Applied Physics Letters, 89, 131920.
18. Patterson, J.K., Park, B.J., Ritley, K., Xiao, H.Z., Allen, L.H., and Rockett, A. (1994). “Kinetics of Ni/a-Ge reactions.” Thin Solid Films, 253(1–2), 456–461.
19. Gaudet, S., Detavernier, C., Lavoie, C., and Desjardins, P. (2006). “Reaction of thin Ni films with Ge: phase formation and texture.” Journal of Applied Physics, 100, 034306.
20. Lin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., and Tung, C.H. (2004). “The interfacial reaction of Ni with (111)Ge, (001)Si₀.₇₅Ge₀.₂₅, and (100)Si at 400 °C.” Thin Solid Films, 462–463, 151–155.
21. Doolittle, L.R. (1986). “A semi-automatic algorithm for Rutherford backscattering analysis.” Nuclear Instruments and Methods in Physics Research, Section B, 15, 227–231.
22. Doolittle, L.R. (1985). “Algorithm for rapid simulation of Rutherford backscattering spectra.” Nuclear Instruments and Methods in Physics Research, Section B, 9, 344.
23. Pondo, K.J. (2010). In Situ Real-Time Rutherford Backscattering Spectrometry Study of Ni/Ge Interaction. M.Sc. Dissertation, University of Zambia.
24. Gas, P., and d’Heurle, F.M. (1993). “Formation of silicide thin films by solid-state reaction.” Applied Surface Science, 73, 153–161.
25. Massalski, T.B. (1986). Binary Alloy Phase Diagrams. American Society for Metals, Metals Park, Ohio.
26. Zhang, Q., Wu, N., Osipowicz, T., Bera, L.K., and Zhu, C. (2005). “Formation and thermal stability of nickel germanide on germanium substrate.” Japanese Journal of Applied Physics, 44(45), L1389–L1391.
2. Ritenour, A., Yu, S., Lee, M.L., Lu, N., Bai, W., Pitera, A., Fitzgerald, E.A., Kwong, D.L., and Antoniadis, D.A. (2003). “Epitaxial strained germanium p-MOSFETs with HfO₂ gate dielectric and TaN gate electrode.” IEDM Technical Digest, 433–436.
3. Shang, H., Okorn-Schmidt, H., Chan, K.K., Copel, M., Ott, J.A., Kozlowski, P.M., Steen, S.E., Cordes, S.A., Wong, H.S.P., Jones, E.C., and Haensch, W.E. (2002). “High-mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric.” IEDM Technical Digest, 441–444.
4. Chui, C.O., Ramanathan, S., Triplett, B.B., McIntyre, P.C., and Saraswat, K.C. (2002). “Germanium MOS capacitors incorporating ultrathin high-k gate dielectrics.” IEEE Electron Device Letters, 23(8), 473–475.
5. Houssa, M., and Heyns, M. (2004). “High-k gate dielectrics: why do we need them?” In High-k Gate Dielectrics, M. Houssa (Ed.), pp. 3–14. Bristol & Philadelphia: Institute of Physics Publishing.
6. Depas, M., Vermeire, B., Mertens, P.W., Van Meirhaeghe, R.L., and Heyns, M.M. (1995). “Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO₂/Si structures.” Solid-State Electronics, 38(8), 1465–1471.
7. Lo, S.H., Buchanan, D.A., Taur, Y., and Wang, W. (1997). “Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs.” IEEE Electron Device Letters, 18, 209–211.
8. Wilk, G.D., Wallace, R.M., and Anthony, J.M. (2001). “High-k gate dielectrics: current status and materials properties considerations.” Journal of Applied Physics, 89(10), 5243–5275.
9. Shang, H., Lee, K.L., Kozlowski, P., D’Emic, C., Babich, I., Sikorshi, E., Ieong, M., Wong, H.S.P., Guarini, K., and Haensch, W. (2004). “Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate.” IEEE Electron Device Letters, 25(3), 135–137.
10. Shang, H., Okorn-Schmidt, H., Chan, K.K., Copel, M., Ott, J.A., Kozlowski, P.M., Steen, S.E., Cordes, S.A., Wong, H.S.P., Jones, E.C., and Haensch, W.E. (2002). “High-mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric.” IEDM Technical Digest, 441–444.
11. Gaudet, S., Detavernier, C., Kellock, A.J., Desjardins, P., and Lavoie, C. (2006). “Thin film reaction of transition metals with germanium.” Journal of Vacuum Science & Technology A, 24(3), 474–485.
12. Marshall, E.D., Wu, C.S., Pai, C.S., Scott, D.M., and Lau, S.S. (1985). “Metal–germanium contacts and germanide formation.” Materials Research Society Symposium Proceedings, 47, 161–166.
13. Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S., and Kawasaki, N. (1988). “Partial epitaxial growth of Ni₂Ge and NiGe on Ge(111).” Thin Solid Films, 162, 287–294.
14. Wittmer, M.W., Nicolet, M.A., and Mayer, J.W. (1977). “The first phase to nucleate in planar transition metal–germanium interfaces.” Thin Solid Films, 42, 51–59.
15. Gaudet, S., Detavernier, C., Kellock, A.J., Desjardins, P., and Lavoie, C. (2006). “Thin film reaction of transition metals with germanium.” Journal of Vacuum Science & Technology A, 24(3), 474–485.
16. Nemouchi, F., Mangelinck, D., Lábár, J.L., Putero, M., Bergman, C., and Gas, P. (2006). “A comparative study of nickel silicides and nickel germanides: phase formation and kinetics.” Microelectronic Engineering, 83, 2101–2106.
17. Nemouchi, F., Mangelinck, D., Bergman, C., Clugnet, G., and Gas, P. (2006). “Simultaneous growth of Ni₅Ge₃ and NiGe by reaction of Ni films with Ge.” Applied Physics Letters, 89, 131920.
18. Patterson, J.K., Park, B.J., Ritley, K., Xiao, H.Z., Allen, L.H., and Rockett, A. (1994). “Kinetics of Ni/a-Ge reactions.” Thin Solid Films, 253(1–2), 456–461.
19. Gaudet, S., Detavernier, C., Lavoie, C., and Desjardins, P. (2006). “Reaction of thin Ni films with Ge: phase formation and texture.” Journal of Applied Physics, 100, 034306.
20. Lin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., and Tung, C.H. (2004). “The interfacial reaction of Ni with (111)Ge, (001)Si₀.₇₅Ge₀.₂₅, and (100)Si at 400 °C.” Thin Solid Films, 462–463, 151–155.
21. Doolittle, L.R. (1986). “A semi-automatic algorithm for Rutherford backscattering analysis.” Nuclear Instruments and Methods in Physics Research, Section B, 15, 227–231.
22. Doolittle, L.R. (1985). “Algorithm for rapid simulation of Rutherford backscattering spectra.” Nuclear Instruments and Methods in Physics Research, Section B, 9, 344.
23. Pondo, K.J. (2010). In Situ Real-Time Rutherford Backscattering Spectrometry Study of Ni/Ge Interaction. M.Sc. Dissertation, University of Zambia.
24. Gas, P., and d’Heurle, F.M. (1993). “Formation of silicide thin films by solid-state reaction.” Applied Surface Science, 73, 153–161.
25. Massalski, T.B. (1986). Binary Alloy Phase Diagrams. American Society for Metals, Metals Park, Ohio.
26. Zhang, Q., Wu, N., Osipowicz, T., Bera, L.K., and Zhu, C. (2005). “Formation and thermal stability of nickel germanide on germanium substrate.” Japanese Journal of Applied Physics, 44(45), L1389–L1391.
Published
2021-01-29
How to Cite
[1]
K. Pondo, “An in SITU Real-time RBS Study of Sequence and Temperature of Formation of Nickel Germanides”, Journal of Natural and Applied Sciences, vol. 1, no. 1, pp. 20-34, Jan. 2021.
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